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Graphene on SiO2/Si wafer

Graphene on SiO2/Si wafer

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  • Properties

  • Product Size

    Up to 90x90mm2(Max)

  • Film morphology

    Continuous Monolayer(>95%)

  • Sheet Resistance

    Av. < 250~400 Ω/sq

  • Mobility

    >3500cm2/Vs (Max.17,000cm2/Vs

  • Transmittance

    >97%

  • Subtrate

    SiO2 (300mm)/Si wafer (Stard)

  • Domain Size

    10-20 μm

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  • High-Resolution TEM Images

  • Raman Spectrum (after transfer)

  • High-Resolution TEM Images

Substrate specifications

Orientation <100>
Thickness 525±25 μm
Oxide Thickness 300nm
Type/Dopant P/Boron
Resistivity Resistivity

  • Electrical Properties

  • Sheet Resistance Uniformity

  • Ultra-Clean Transfer by Pressure Sensitive Adhesive Films

Reference

(1) S. Kim et. al. Ultra-Clean Patterned Transfer of Single-Layer Graphene by Recyclable Pressure Sensitive Adhesive Films. Nano Lett (accepted).
(2) S. Bae*, H. Kim* et al. Roll-to-roll production of 30 inch graphene films for transparent electrodes Nature Nanotech. 5, 574 (2010).

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